IRFZ44N is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Technical Features: Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Technical Specifications: Package: TO-220 Package Number of Channels: 1 Channel Transistor Polarity: N-Channel Drain-Source Breakdown Voltage (Vds): 55V Continuous Drain Current (Id): 49v Drain-Source Resistance (Rds On): 0.0175Ohms Gate-Source Voltage (Vgs): 20v Gate Charge (Qg): 63nC Operating Temperature Range:55 – 175°C Power Dissipation (Pd): 94W Package Includes: 1 Piece- IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET